24N60FJD2 transistor equivalent, 600v dp mos power transistor.
* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/d.
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high effici.
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